包裝：散裝 類別：盒子，外殼，機架 盒配件 描述：BOX TO STUD SUPPORT FOR 1/4 DRYW

PANDUIT

包裝：散裝 類別：盒子，外殼，機架 盒配件 描述：BOX TO STUD SUPPORT FOR 1/4 DRYW

PANDUIT

絲?。?a target="_blank" title="Marking" href="/az/marking.html">AZ；Package：SOT323；30 V, 0.9 A N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Low threshold voltage ? Very fast switching ? Trench MOSFET technology 1.3 Appl

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30 V, 0.9 A N-channel Trench MOSFET

文件：889.57 Kbytes 頁數：15 Pages

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PHI

絲印：ZW；Package：SC-70；30V N-channel Trench MOSFET

文件：720.55 Kbytes 頁數：15 Pages

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30V N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ? Low threshold voltage\n? Very fast switching\n? Trench MOSFET technology\n? ElectroStatic Discharge (ESD) protection > 2 kV HBM;

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PMF250XNEA - 30 V, N-channel Trench MOSFET

30 V, N-channel Trench MOSFET - N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ·Low threshold voltage\n·Very fast switching\n·Trench MOSFET technology\n·ElectroStatic Discharge (ESD) protection > 2 kV HBM\n·AEC-Q101 qualified;

Nexperia

安世

30 V, 0.9 A N-channel Trench MOSFET

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