20 V, Common Drain N-channel Trench MOSFET

N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. ? Common-drain type for bi-directional current flow\n? Low threshold voltage\n? Ultra small package: 0.98 × 1.48 × 0.35 mm\n? Trench MOSFET technology\n? ElectroStatic Discharge (ESD) protection > 2 kV HBM;

Nexperia

安世

絲印：AH；Package：WLCSP6；20 V, Common Drain N-channel Trench MOSFET

文件：404.83 Kbytes 頁數(shù)：18 Pages

NEXPERIA

安世

12 V, N-channel Trench MOSFET

文件：376.58 Kbytes 頁數(shù)：15 Pages

PHI

PHI

12 V, N-channel Trench MOSFET

文件：741.77 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

650W 4 x 6 AC-DC “U” Channel Power Supply Converter

Compact high-density design and thermal performanceoperation to: ?450W3 convection at +50°C; no derating with inputline voltage ?650W with forced airflow at +50°C; no derating withinput line voltage ?800W “power boost” (at output start-up) for 30s. Voltage (+15)2 adjustment of Main V1 Output

文件：1.57256 Mbytes 頁數(shù)：12 Pages

MURATA

村田