絲?。?a target="_blank" title="Marking" href="/lm2105/marking.html">LM2105；Package：SOIC；LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features ? Drives two N-channel MOSFETs in half-bridge configuration ? Integrated bootstrap diode ? 5-V typical undervoltage lockout on GVDD ? 105-V maximum recommended voltage on BST ? –19.5-V absolute maximum negative transient voltage handling on SH ? 0.5-A/0.8-A peak source/sink curr

文件：1.38329 Mbytes 頁數(shù)：25 Pages

TI

德州儀器

LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features ? Drives two N-channel MOSFETs in half-bridge configuration ? Integrated bootstrap diode ? 5-V typical undervoltage lockout on GVDD ? 105-V maximum recommended voltage on BST ? –19.5-V absolute maximum negative transient voltage handling on SH ? 0.5-A/0.8-A peak source/sink curr

文件：1.21212 Mbytes 頁數(shù)：28 Pages

TI

德州儀器

LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features ? Drives two N-channel MOSFETs in half-bridge configuration ? Integrated bootstrap diode ? 5-V typical undervoltage lockout on GVDD ? 107-V absolute maximum voltage on BST ? –19.5-V absolute maximum negative transient voltage handling on SH ? 0.5-A/0.8-A peak source/sink current

文件：2.26393 Mbytes 頁數(shù)：32 Pages

TI

德州儀器

LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features ? Drives two N-channel MOSFETs in half-bridge configuration ? Integrated bootstrap diode ? 5-V typical undervoltage lockout on GVDD ? 105-V maximum recommended voltage on BST ? –19.5-V absolute maximum negative transient voltage handling on SH ? 0.5-A/0.8-A peak source/sink curr

文件：1.38329 Mbytes 頁數(shù)：25 Pages

TI

德州儀器

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