4x DDR3 DIMM, Max. 32 GB

文件：589.21 Kbytes 頁數(shù)：1 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low Input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

文件：208.64 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VQS Rated at ±20 V ? Silicon Gate for Fast Switching Sp

文件：177.13 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：49.06 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電