絲?。?strong>PHPT；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low induct0ance 3000W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature sol

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絲?。?a target="_blank" title="Marking" href="/0406nab/marking.html">0406NAB；Package：SOT669；40 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY-Q 2. Features and benefits ? High thermal power dissipation capability ? High temperature applications up to 175 °C ? Reduced Prin

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絲印：0406PAB；Package：SOT669；40 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY-Q 2. Features and benefits ? High thermal power dissipation capability ? Suitable for high temperature applications up to 175 °C ?

文件：280.88 Kbytes 頁數(shù)：14 Pages

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絲?。?a target="_blank" title="Marking" href="/0410nab/marking.html">0410NAB；Package：SOT669；40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY 2. Features and benefits ? High thermal power dissipation capability ? High temperature applications up to 175 °C ? Reduced Printed

文件：719.31 Kbytes 頁數(shù)：15 Pages

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絲?。?a target="_blank" title="Marking" href="/0410nab/marking.html">0410NAB；Package：SOT669；40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY-Q 2. Features and benefits ? High thermal power dissipation capability ? High temperature applications up to 175 °C ? Reduced Prin

文件：284.7 Kbytes 頁數(shù)：14 Pages

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絲?。?a target="_blank" title="Marking" href="/0410pab/marking.html">0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY 2. Features and benefits ? High thermal power dissipation capability ? Suitable for high temperature applications up to 175 °C ? Red

文件：730.92 Kbytes 頁數(shù)：16 Pages

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絲?。?a target="_blank" title="Marking" href="/0410pab/marking.html">0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY-Q 2. Features and benefits ? High thermal power dissipation capability ? Suitable for high temperature applications up to 175 °C ?

文件：295.62 Kbytes 頁數(shù)：14 Pages

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絲?。?a target="_blank" title="Marking" href="/0415nab/marking.html">0415NAB；Package：LFPAK56；40 V, 15 A NPN high power bipolar transistor

General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY Features and benefits ? High thermal power dissipation capability ? High temperature applications up to 175 °C ? Reduced Printed Circuit

文件：274.41 Kbytes 頁數(shù)：13 Pages

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絲?。?a target="_blank" title="Marking" href="/0415nab/marking.html">0415NAB；Package：SOT669；40 V, 15 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY-Q 2. Features and benefits ? High thermal power dissipation capability ? High temperature applications up to 175 °C ? Reduced Prin

文件：285.68 Kbytes 頁數(shù)：14 Pages

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絲?。?a target="_blank" title="Marking" href="/0415pab/marking.html">0415PAB；Package：LFPAK56；40 V, 15 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY 2. Features and benefits ? High thermal power dissipation capability ? High temperature applications up to 175 °C ? Reduced Printe

文件：272.73 Kbytes 頁數(shù)：13 Pages

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