TRANSIENT ABSORPTION ZENER

文件：80.24 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

AC POWER BUS VOLTAGE SUPPRESSOR

MECHANICAL CHARACTERISTICS ? Hermetically Sealed Glass to Metal Sub-Assemblies (PHP) ? Sub-Assemblies are Packaged in Molded Epoxy Case (PIP) ? Weight 46 grams (Approximate) ? Flammability rating UL 94V-0 ? Device Marking: Logo & Part Number ? Screening Available Upon Request - The PHP &

文件：61.55 Kbytes 頁數(shù)：4 Pages

PROTEC

ac power bus voltage suppressor

Description The PHP and PIP Series of devices are designed in accordance with DOD-STD-1399, section 300 interface standard and MIL-STD704A for shipboard systems, electrical power and alternating current. When large voltage transients endanger voltage sensitive components, this series provides r

文件：377.49 Kbytes 頁數(shù)：5 Pages

PROTEC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 44A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.32 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. FEATURES ? ’Trench’

文件：80.86 Kbytes 頁數(shù)：10 Pages

PHI

PHI

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：65.06 Kbytes 頁數(shù)：8 Pages

PHI

PHI

N-Channel 60 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Logic-Level Gate Drive ? Fast Switching ? Compliant to RoHS Directive 2002/95/EC

文件：1.31329 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 21mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.09 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP45N03LT is suppl

文件：55.3 Kbytes 頁數(shù)：8 Pages

PHI

PHI

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS?1 technology. Product availability: PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast swit

文件：298.65 Kbytes 頁數(shù)：14 Pages

PHI

PHI