DATA SUBJECT TO CHANGE WITHOUT NOTLCE

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HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

Quality Products. Service Excellence

文件：77.2 Kbytes 頁數(shù)：2 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

N-channel TrenchMOS? logic level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. 1.2 Features 1.3 Applications n Low on-state resistance n Fast switching. n DC-to-DC converters n Portable equipment applications.

文件：210.99 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits L

文件：462.27 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

N-Channel 100 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Extremely Low Qgd for Switching Losses ? 100 Rg Tested ? 100 Avalanche Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Primary Side Switch

文件：621.16 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

文件：691.9 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits High

文件：781.11 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

N-Channel 650 V (D-S) MOSFET

文件：1.08615 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N-channel TrenchMOS-TM logic level FET

文件：92.74 Kbytes 頁數(shù)：12 Pages

PHI

PHI

TrenchMOS standard level FET

文件：236.27 Kbytes 頁數(shù)：12 Pages

PHI

PHI