絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’technology ? Very low on-state resistance ? Fast switching ? Low thermal resistance ? Logic level compatible Appl

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PHI

PHI

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS?1 technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching.

文件：296.3 Kbytes 頁數(shù)：14 Pages

PHI

PHI

N-channel TrenchMOS transistor Logic level FET

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N-channel enhancement mode field-effect transistor

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