絲?。?strong>PHD；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 9V 3000W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：4.23189 Mbytes 頁(yè)數(shù)：8 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits ? Low

文件：778.5 Kbytes 頁(yè)數(shù)：13 Pages

NEXPERIA

安世

TrenchMOS??logic level FET

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS? technology. Product availability: PHB101NQ03LT in SOT404 (D2-PAK) PHD101NQ03LT in SOT428 (D-PAK). Features ■ Low gate charge ■ Low on-state resistance. Applications ■ Optimized as

文件：280.6 Kbytes 頁(yè)數(shù)：13 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conductio

文件：196.41 Kbytes 頁(yè)數(shù)：13 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.42 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS? technology. Features ■Logic level threshold ■Very low on-state resistance ■Lead-free construction ■Low gate charge Applications ■DC-to-DC conve

文件：209.14 Kbytes 頁(yè)數(shù)：12 Pages

恩XP

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS? technology. Features ■Logic level threshold ■Very low on-state resistance ■Lead-free construction ■Low gate charge Applications ■DC-to-DC conve

文件：108.63 Kbytes 頁(yè)數(shù)：14 Pages

恩XP

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS? technology. Features ■Logic level threshold ■Very low on-state resistance ■Lead-free construction ■Low gate charge Applications ■DC-to-DC conve

文件：209.14 Kbytes 頁(yè)數(shù)：12 Pages

恩XP

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHP108NQ03LT in SOT78 (TO-220AB) PHB108NQ03LT in SOT404 (D2-PAK) PHD108NQ03LT in SOT428 (D-PAK). Features ■Logic level compatible ■

文件：269.45 Kbytes 頁(yè)數(shù)：14 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·Switch-mode Power Supplies ·Power Motor Control

文件：299.4 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電