N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?1 technology. Features ■ TrenchMOS? technology ■ Low on-state resistance ■ Avalanche ruggedness rated ■ Logic level compatible ■ Surface mount package. Applications ■ DC to DC converters ■

文件：331.22 Kbytes 頁數(shù)：13 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) =5.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.48 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel enhancement mode field-effect transistor

恩XP

Switching (30V, 10A)

Features 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electric Structure Silicon N-channel MOS FET

文件：44.16 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

N-Channel 20V (D-S) MOSFET

文件：1.00656 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

4V Drive Nch MOSFET

4V Drive Nch MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter.

文件：173.81 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆