N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH5330 in SOT669 (LFPAK). Features ■ Logic level compatible ■ Low drive current ■ High-density mounting ■ Very low on-state resistance. Applications ■ DC-to-DC conve

文件：239.68 Kbytes 頁數(shù)：12 Pages

PHI

PHI

N-channel enhancement mode field-effect transistor

恩XP

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Higher operat

文件：212.84 Kbytes 頁數(shù)：12 Pages

恩XP

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits High

文件：327.87 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世