絲?。?a target="_blank" title="Marking" href="/af/marking.html">AF；Package：DFN1006；BIDIRECTIONAL TVS DIODE

Features Protects one data or power line Ultra low leakage: nA level Operating voltage: 12V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 8A (8/20μs) RoHS Compliant A

文件：1.68996 Mbytes 頁數：4 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/af/marking.html">AF；Package：DFN1006；BIDIRECTIONAL TVS DIODE

Features Protects one data or power line Ultra low leakage: nA level Operating voltage: 12V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 8A (8/20μs) RoHS Compliant A

文件：1.64619 Mbytes 頁數：4 Pages

LEIDITECH

雷卯電子

絲印：H2C；Package：DFN1006-2L；Bi-directional 12V Normal Capacitance ESD Protecto r

Description The PESDNC2FD12VBHD2 protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical.

文件：598.82 Kbytes 頁數：5 Pages

GWSEMI

唯圣電子

Transient Voltage Suppressors for ESD Protection

Description Feature 180W Peak pulse power per line (tP = 8/20μs) DFN1006-2L package Replacement for MLV(0402) Unidirectional configurations Response time is typically

文件：555.15 Kbytes 頁數：5 Pages

SXSEMI

瞬芯半導體

Transient Voltage Suppressors for ESD Protection

Description The SXESDNC2FD12VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical

文件：594.76 Kbytes 頁數：5 Pages

SXSEMI

瞬芯半導體

Transient Voltage Suppressors for ESD Protection

Description The SXESDNC2FD12VBH protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrica

文件：520.82 Kbytes 頁數：5 Pages

SXSEMI

瞬芯半導體