絲印：PEMH；Package：DO-214AB；Automotive and High Reliability TVS Diodes

文件：1.08668 Mbytes 頁(yè)數(shù)：5 Pages

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絲印：PEMH；Package：DO-214AB；Automotive and High Reliability TVS Diodes

文件：1.08668 Mbytes 頁(yè)數(shù)：5 Pages

YINT

音特電子

絲?。?a target="_blank" title="Marking" href="/10/marking.html">10；Package：SOT666；NPN/NPN resistor-equipped transistors; R1 = 2.2 k?, R2 = 47k?

1.1 General description NPN/NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications ? Low current peripheral driver ? Control of IC inputs ? Replaces general-purpose transistors in digital applications Table 1. Pr

文件：912.36 Kbytes 頁(yè)數(shù)：16 Pages

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絲?。?a target="_blank" title="Marking" href="/h1/marking.html">H1；Package：SOT666；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD3 PNP/PNP complement: PEMB11 2. Features and benefits ? 100 mA output current capability ? Built-in bias re

文件：223.25 Kbytes 頁(yè)數(shù)：11 Pages

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絲?。?a target="_blank" title="Marking" href="/21/marking.html">21；Package：SOT666；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD13 PNP/PNP complement: PEMB13 2. Features and benefits ? 100 mA output current capability ? Built-in bias r

文件：223.78 Kbytes 頁(yè)數(shù)：11 Pages

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絲?。?a target="_blank" title="Marking" href="/z2/marking.html">Z2；Package：SOT666；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD12 PNP/PNP complement: PEMB2 2. Features and benefits ? 100 mA output current capability ? Built-in bias re

文件：222.65 Kbytes 頁(yè)數(shù)：11 Pages

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絲?。?a target="_blank" title="Marking" href="/z2/marking.html">Z2；Package：SOT666；NPN/NPN resistor-equipped transistors; R1 = 47 k?, R2 = 47 k?

Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces component count ? Reduces pick and place costs ? AEC-Q101 qualified

文件：912 Kbytes 頁(yè)數(shù)：15 Pages

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絲?。?a target="_blank" title="Marking" href="/6k/marking.html">6K；Package：SOT666；NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.1 General description NPN/NPN resistor-equipped transistors. 1.2 Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs 1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transisto

文件：283.32 Kbytes 頁(yè)數(shù)：9 Pages

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絲?。?a target="_blank" title="Marking" href="/6t/marking.html">6T；Package：SOT666；NPN/NPN resistor-equipped transistors;

General description NPN/NPN Resistor-Equipped Transistors (RET). Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replaces general-purpose transist

文件：179.51 Kbytes 頁(yè)數(shù)：10 Pages

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絲?。?a target="_blank" title="Marking" href="/h4/marking.html">H4；Package：SOT666；NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open

FEATURES ?Built-in bias resistors ?Simplified circuit design ?Reduction of component count ?Reduced pick and place costs. APPLICATIONS ?Low current peripheral driver ?Replacement of general purpose transistors in digital applications ?Control of IC inputs. DESCRIPTION NPN/NPN resistor-eq

文件：209.72 Kbytes 頁(yè)數(shù)：9 Pages

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