D-Sub Receptacle Contact Solder Attachment For PE-SR405AL, PE-SR405FL, RG405

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PASTERNACK

N-channel TrenchMOS intermediate level FET

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PHI

PHI

N-channel TrenchMOS intermediate level FET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications 1.4 Quick reference data n Low thermal resistance n SO8 equivalent area footprint n Low threshold voltage n Low on-state resistance

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NEXPERIA

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NYLON M/F HEX STANDOFF

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KEYSTONE

Keystone Electronics Corp.

N-Channel Enhancement Mode Power MOSFET

Description The 4840 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lea

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TUOFENG

拓鋒半導(dǎo)體

MALE/FEMALE THREADED STANDOFFS

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KEYSTONE

Keystone Electronics Corp.