PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTC113EMB. ? 100 mA output current capability\n? Built-in bias resistors\n? Simplifies circuit design\n? Leadless ultra small SMD plastic package\n? Low package height of 0.37 mm;

Nexperia

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絲?。?a target="_blank" title="Marking" href="/00011100/marking.html">00011100；Package：SOT883B；PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 1 k廓

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Package：3-XFDFN；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

Nexperia USA Inc.

PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：235.87 Kbytes 頁數(shù)：19 Pages

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