RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

文件：520.53 Kbytes 頁數(shù)：21 Pages

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Package：PowerSO-10 裸露底部焊盤；包裝：托盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 945MHZ PWRSO-10

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HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

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RF POWER TRANSISTORS The LdmoSTFAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

文件：73.25 Kbytes 頁數(shù)：8 Pages

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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10 RF-STAP-package Description The STAP57060 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. It is designed fo

文件：261.44 Kbytes 頁數(shù)：16 Pages

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