RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：540.83 Kbytes 頁數(shù)：23 Pages

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：540.83 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

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15W 12.5V 500MHz LDMOS，PowerSO-10RF塑料封裝

The PD55015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, li ? Excellent thermal stability \n? Common source configuration \n? POUT =15 W with 14dB gain @ 500 MHz/12.5 V;

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Package：PowerSO-10 裸露底部焊盤；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 500MHZ PWRSO-10

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Package：PowerSO-10 裸露底部焊盤；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 500MHZ PWRSO-10

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Package：PowerSO-10RF 裸露底部焊盤（2 條成形引線）；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：TRANS RF N-CH FET POWERSO-10RF

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