PD55008-E中文資料8W 12.5V 500MHz LDMOS，PowerSO-10RF塑料封裝數(shù)據(jù)手冊(cè)ST規(guī)格書(shū)

描述 Description

The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz.

PD55008 boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008 superior linearity performance makes it an ideal solution for car mobile radio.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)

特性 Features

? Excellent thermal stability
? POUT = 8 W with 17dB gain @ 500MHz / 12.5V
? Common source configuration
? New RF plastic package

簡(jiǎn)介

PD55008-E屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由ST制造生產(chǎn)的PD55008-E晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類(lèi)型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。