RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes 頁數(shù)：27 Pages

STMICROELECTRONICS

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes 頁數(shù)：27 Pages

STMICROELECTRONICS

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RF功率LDMOS晶體管

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearit ? Excellent thermal stability \n? Common source configuration \n? POUT = 3 W with 12 dB gain @ 500 MHz \n? New RF plastic package;

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Package：PowerSO-10 裸露底部焊盤；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 25V 500MHZ PWRSO10

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