| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PD20 | SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING 文件：69.38 Kbytes 頁數(shù)：2 Pages | EDI | EDI | |
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell 文件：240.84 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell 文件：240.84 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell 文件：240.84 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell 文件：240.84 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
DIODE MODULE 200A/1200 to 1600V FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use 文件：204.86 Kbytes 頁數(shù)：3 Pages | NIEC | NIEC | ||
RF power transistor, LdmoST family Description The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellen 文件：155.35 Kbytes 頁數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF power transistor, LdmoST family Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell 文件：352.27 Kbytes 頁數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF power transistor, LdmoST family Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell 文件：352.27 Kbytes 頁數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF power transistor, LdmoST family Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell 文件：352.27 Kbytes 頁數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- EStore Flag：
true
- New Product Introduction：
false
- Product Classification：
EPL
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SDF |
2447 |
SOP8 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
GI |
23+ |
SOP8 |
185 |
現(xiàn)貨庫存 |
詢價 | ||
PULSEFLOW |
00/01+ |
DIP28 |
112 |
全新原裝100真實現(xiàn)貨供應(yīng) |
詢價 | ||
PULSEFLOW |
23+ |
SOP/28 |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
SANKEN |
10+ |
主營模塊 |
200 |
全新原裝,絕對正品,現(xiàn)貨供應(yīng) |
詢價 | ||
EVERLIGHT原裝 |
13+ |
DIP-2 |
18618 |
原裝分銷 |
詢價 | ||
PULSEFLOW |
24+ |
SDIP-28 |
32 |
詢價 | |||
STM |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
PIONEER |
25+ |
SOP40 |
2500 |
強調(diào)現(xiàn)貨,隨時查詢! |
詢價 | ||
TOSHIBA |
1995 |
DIP-28P |
188 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 |
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