100 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current gain (hF

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恩XP

絲?。?a target="_blank" title="Marking" href="/a7/marking.html">A7；Package：SC-74；100 V, 1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

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NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 頁數(shù)：12 Pages

PHI

PHI

100 V, 1 A PNP low VCEsat (BISS) transistor

文件：189.08 Kbytes 頁數(shù)：13 Pages

PHI

PHI

100 V, 1 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS8110D. ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? High efficiency due to less heat generation\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n? AEC-Q101 qualifie;

Nexperia

安世

Package：SC-74，SOT-457；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 100V 1A 6TSOP

Nexperia USA Inc.