| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PBSS5220V | 20 V, 2 A PNP low VCEsat (BISS) transistor General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4220V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ Hi 文件:182.56 Kbytes 頁數(shù):13 Pages | 恩XP | 恩XP | |
PBSS5220V | 絲印:N7;Package:SOT666;20 V, 2 A PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 文件:296.15 Kbytes 頁數(shù):14 Pages | NEXPERIA 安世 | NEXPERIA | |
20 V, 2 A PNP low VCEsat (BISS) transistor 文件:182.56 Kbytes 頁數(shù):13 Pages | PHI PHI | PHI | ||
PBSS5220V | 20 V, 2 A PNP low VCEsat (BISS) transistor General description\nPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.\nNPN complement: PBSS4220V. ■ Low collector-emitter saturation voltage VCEsat\n■ High collector current capability: IC and ICM\n■ High collector current gain (hFE) at high IC\n■ High efficiency due to less heat generation\n■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistorsApplications\n■ DC-t; | 恩XP | 恩XP | |
PBSS5220V | PBSS5220V - 20 V, 2 A PNP low V_CEsat (BISS) transistor 20 V, 2 A PNP low V_CEsat (BISS) transistor - PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4220V. ·Low collector-emitter saturation voltage VCEsat\n·High collector current capability: IC and ICM\n·High collector current gain (hFE) at high IC\n·High efficiency due to less heat generation\n·Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n·AEC-Q101 qualified; | Nexperia 安世 | Nexperia | |
Package:SOT-563,SOT-666;包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS PNP 20V 2A SOT666 | Nexperia USA Inc. | Nexperia USA Inc. |
技術(shù)參數(shù)
- Package version:
SOT666
- Package name:
SOT666
- Size (mm):
1.6 x 1.2 x 0.55
- transistor polarity:
PNP
- P_tot [max] (mW):
900
- V_CEO [max] (V):
-20
- I_C [max] (A):
-2
- I_CM [max] (A):
-4
- h_FE [min]:
220
- h_FE [typ]:
495
- f_T [min] (MHz):
150
- f_T [typ] (MHz):
185
- R_CEsat [typ] (mΩ):
140
- R_CEsat [max] (mΩ):
210
- V_CEsat [max] (mV):
-455
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
恩XP |
1637+ |
NA |
8000 |
詢價(jià) | |||
恩XP |
24+ |
原廠原封 |
1500 |
原裝現(xiàn)貨熱賣 |
詢價(jià) | ||
NEXPERIA/安世 |
23+ |
SOT666 |
6000 |
原裝正品假一罰百!可開增票! |
詢價(jià) | ||
恩XP |
23+ |
SOT666 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
恩XP |
22+ |
SOT666 |
20000 |
原裝現(xiàn)貨,實(shí)單支持 |
詢價(jià) | ||
ADI |
23+ |
SOT666 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
ADI |
23+ |
SOT666 |
7000 |
詢價(jià) | |||
恩XP |
25+ |
SOT666 |
188600 |
全新原廠原裝正品現(xiàn)貨 歡迎咨詢 |
詢價(jià) | ||
恩XP |
24+ |
NA |
15000 |
原廠/代理渠道 只做原裝正品 價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
恩XP |
24+ |
1215+ |
80000 |
只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開13%增 |
詢價(jià) |
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