40 V, 5 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. FEATURES ? High hFE and low VCEsat at high current operation ? High collector current capability: IC maximum 4 A ? High efficiency leading to less heat generation. APPLICATIONS ? Mediu

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PHI

PHI

40 V, 5 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. FEATURES ? High hFE and low VCEsat at high current operation ? High collector current capability: IC maximum 4 A ? High efficiency leading to less heat generation. APPLICATIONS ? Mediu

文件：206.79 Kbytes 頁數(shù)：13 Pages

恩XP

絲印：1B；Package：SOT89；40 V, 5 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. 2. Features and benefits ? High hFE and low VCEsat at high current operation ? High collector current capability: IC maximum 4 A ? High efficiency leading to less heat gener

文件：242.7 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 頁數(shù)：12 Pages

PHI

PHI

NPN low VCEsat (BISS) transistor 40 V, 5 A

文件：206.79 Kbytes 頁數(shù)：13 Pages

PHI

PHI

40 V, 5 A NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a medium power SOT89 (SC-62) package.\n PNP complement: PBSS5540X. ? High hFE and low VCEsat at high current operation\n? High collector current capability: IC maximum 4 A\n? High efficiency leading to less heat generation.\n? AEC-Q101 qualified;

Nexperia

安世

功率三極管

YJ

益嘉源

NPN小信號三極管

CBI

創(chuàng)基電子

Package：TO-243AA；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 40V 4A SOT89

Nexperia USA Inc.