20 V, 3 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5320X. FEATURES ? SOT89 (SC-62) package ? Low collector-emitter saturation voltage VCEsat ? High collector current capability: IC and ICM ? Higher efficiency leading to less heat generation ? Reduced prin

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PHI

PHI

20 V, 3 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5320X. FEATURES ? SOT89 (SC-62) package ? Low collector-emitter saturation voltage VCEsat ? High collector current capability: IC and ICM ? Higher efficiency leading to less heat generation ? Reduced prin

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恩XP

絲?。?a target="_blank" title="Marking" href="/s44/marking.html">S44；Package：SOT89；20 V, 3 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a medium power flat lead SOT89 plastic package. PNP complement: PBSS5320X 2. Features and benefits ? SOT89 (SC-62) package ? Low collector-emitter saturation voltage VCEsat ? High collector current capability: IC and ICM ? Higher efficie

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NEXPERIA

安世

Low VCEsat (BISS) transistors

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PHI

PHI

NPN low VCEsat (BISS) transistor 20 V, 3 A

文件：214.02 Kbytes 頁數(shù)：12 Pages

PHI

PHI

20 V, 3 A NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a medium power flat lead SOT89 plastic package.\n PNP complement: PBSS5320X ? SOT89 (SC-62) package\n? Low collector-emitter saturation voltage VCEsat\n? High collector current capability: IC and ICM\n? Higher efficiency leading to less heat generation\n? Reduced printed-circuit board requirements.\n? AEC-Q101 qualified;

Nexperia

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Package：TO-243AA；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 20V 3A SOT89

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