RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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isc Silicon NPN RF Transistor

DESCRIPTION · High gain bandwidth product fT = 8 GHz (Typ) @ VCE=6V,IC=30mA,f=1GHz · High gain, low noise figure ︱S21e︱2 = 12dB @ VCE=6V,IC=30mA,f=1GHz NF = 2dB( Typ ) @ VCE=6V,IC=5mA,f=1GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

文件：317.54 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

UHF wideband transistor

DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. FEATURES ?

文件：144.33 Kbytes 頁數(shù)：16 Pages

PHI

PHI

NPN UHF寬頻帶晶體管

Not recommended for new design in, please use replacement BFU530A.\nSilicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar det Gold metallization ensures excellent reliability\nHigh gain\nLow distortion\nLow noise\nSmall package;

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Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF SMALL SIGNAL BIPOLAR TRANSIST

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UHF wideband transistor

文件：121.45 Kbytes 頁數(shù)：16 Pages

PHI

PHI

UHF wideband transistor

文件：121.45 Kbytes 頁數(shù)：16 Pages

JMNIC

錦美電子

UHF wideband transistor

文件：160.89 Kbytes 頁數(shù)：13 Pages

JMNIC

錦美電子

UHF wideband transistor

文件：160.89 Kbytes 頁數(shù)：13 Pages

PHI

PHI

NPN UHF寬頻帶晶體管

硅NPN晶體管，采用表面貼裝3針SOT23封裝。晶體管主要設計用于RF前端GHz范圍內的寬帶應用，比如模擬和數(shù)字移動電話、無繩電話、雷達探測器、傳呼機和衛(wèi)星電視調諧器。 金屬化鍍金確保極佳的可靠性\n高增益\n低失真\n低噪聲\n小型封裝;

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