40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z 2. Features and benefits ? Low collector-emitter saturation voltage ? High current capability ? Improved device reliability due to reduced heat generation. 3. Applications ? Supply l

文件：238.78 Kbytes 頁數(shù)：9 Pages

NEXPERIA

安世

絲印：PB5540；Package：SC-73；40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z 2. Features and benefits ? Low collector-emitter saturation voltage ? High current capability ? Improved device reliability due to reduced heat generation. 3. Applications ? Supply l

文件：238.78 Kbytes 頁數(shù)：9 Pages

NEXPERIA

安世

絲?。?strong>PB5540；Package：SC-73；40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z-Q 2. Features and benefits ? Low collector-emitter saturation voltage ? High current capability ? Improved device reliability due to reduced heat generation ? Qualified according to AEC

文件：222.84 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

40 V, 5 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. FEATURES ? Low collector-emitter saturation voltage VCEsat ? High collector current capability: IC and ICM ? High efficiency leading to less heat generation. APPLICATIONS ? Supply line

文件：100.93 Kbytes 頁數(shù)：13 Pages

PHI

PHI

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 頁數(shù)：12 Pages

PHI

PHI