50 V low VCEsat PNP transistor

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50 V low VCEsat PNP transistor

DESCRIPTION\nPNP low VCEsat transistor in a SOT223 plastic package.\nNPN complement: PBSS4350Z.FEATURES\n? Low collector-emitter saturation voltage\n? High collector current capability: IC and ICM\n? High collector current gain (hFE) at high IC\n? Higher efficiency leading to less heat generation\n? ? Low collector-emitter saturation voltage\n? High collector current capability: IC and ICM\n? High collector current gain (hFE) at high IC\n? Higher efficiency leading to less heat generation\n? Reduced PCB area requirements compared to DPAK.;

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絲印：PB5350；Package：SC-73；50 V, 3 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z 2. Features and benefits ? Low collector-emitter saturation voltage VCEsat ? High collector current

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PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SC-74 plastic package. NPN complement: PBSS4350D. FEATURES ? High current capabilities ? Low VCEsat. APPLICATIONS ? Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers ? VCEsat critical applica

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Low VCEsat (BISS) transistors

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