N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 57A, RDS(ON) = 10m? @VGS = 10V. RDS(ON) = 14m? @VGS = 4.5V Super high dense cell design for extremely low RDS(ON). High power and current handing capability Lead free product is acquired. TO-251 & TO-252 package.

文件：117.42 Kbytes 頁數：4 Pages

CET

華瑞

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intend

文件：31.53 Kbytes 頁數：5 Pages

PHI

PHI

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR30100WT series is supplied in the conventional leaded SOT429 (TO247) package. FEATURES ? Low forward volt drop ? Fast

文件：46.4 Kbytes 頁數：5 Pages

PHI

PHI

cable assembly, rg402c/u, n male to tnc male

文件：95.01 Kbytes 頁數：1 Pages

PASTERNACK