Power Application Controller

文件：739.85 Kbytes 頁數(shù)：70 Pages

ACTIVE-SEMIActive-Semi, Inc

技領半導體技領半導體（上海）有限公司

Power Application Controller

文件：769.27 Kbytes 頁數(shù)：70 Pages

ACTIVE-SEMIActive-Semi, Inc

技領半導體技領半導體（上海）有限公司

Power Application Controller

文件：808.66 Kbytes 頁數(shù)：74 Pages

ACTIVE-SEMIActive-Semi, Inc

技領半導體技領半導體（上海）有限公司

50 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Low collector-emitter saturation voltage VCEsat ? High collector current capability: IC and ICM ? Higher efficiency leading to

文件：282.53 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

50 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Low collector-emitter saturation voltage VCEsat ? High collector current capability: IC and ICM ? Higher efficiency leading to

文件：283.74 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

50 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. FEATURES ? Low collector-emitter saturation voltage VCEsat ? High collector current capability: IC and ICM ? Higher efficiency leading to less heat generation ? Reduced printed-circuit

文件：49.74 Kbytes 頁數(shù)：7 Pages

PHI

PHI