絲?。?strong>PA2；Package：U-DFN1610-2；1 CHANNEL HIGH SURGE TVS DIODE

Features ? Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV ? One Channel of ESD Protection ? Low Channel Input Capacitance ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) Applications ? Cellular Ha

文件：278.9 Kbytes 頁(yè)數(shù)：5 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?strong>PA2；Package：U-DFN1610-2；ONE CHANNEL HIGH SURGE TVS DIODE

Features ? Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV ? One Channel of ESD Protection ? Low Channel Input Capacitance ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? The DIODES? D3V3S1U2LP1610Q

文件：404.92 Kbytes 頁(yè)數(shù)：6 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?strong>PA2；Package：SOT563；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits Dual P-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMG1023UVQ is suitable for a

文件：471.6 Kbytes 頁(yè)數(shù)：7 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?strong>PA2；Package：SOT563；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits Dual P-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMG1023UVQ is suitable for a

文件：471.6 Kbytes 頁(yè)數(shù)：7 Pages

DIODES

美臺(tái)半導(dǎo)體

絲印：PA2；Package：SOT23(TO-236)；20V P-Channel Enhancement-Mode MOSFET

文件：703.84 Kbytes 頁(yè)數(shù)：5 Pages

LRC

樂(lè)山無(wú)線電

絲?。?strong>PA2；Package：SOT23(TO-236)；20V P-Channel Enhancement-Mode MOSFET

文件：703.84 Kbytes 頁(yè)數(shù)：5 Pages

LRC

樂(lè)山無(wú)線電

絲?。?strong>PA2；Package：TSOP-5；LDO Regulator, 150 mA, 38V, 1 A IQ, with PG

文件：5.33016 Mbytes 頁(yè)數(shù)：30 Pages

ONSEMI

安森美半導(dǎo)體

Ultra Linear Driver Amplifier - 1 Watt 1800 to 2000 MHz

Description The PA2001 is a is a discrete hybrid design, which uses thick film solder manufacturing processes for accurate performance and high reliability. This 2 stage GaAS FET transistor design uses feedback loops for flat broadband linear performance, with very low noise figure. The model is

文件：107.46 Kbytes 頁(yè)數(shù)：1 Pages

MA-COM

Ultra Linear Driver Amplifier - 1 Watt 1800 to 2000 MHz

Description The PA2001 is a is a discrete hybrid design, which uses thick film solder manufacturing processes for accurate performance and high reliability. This 2 stage GaAS FET transistor design uses feedback loops for flat broadband linear performance, with very low noise figure. The model is

文件：237.76 Kbytes 頁(yè)數(shù)：1 Pages

MACOM

Ultra Linear Driver Amplifier 1800 to 2000 MHz

Description The PA2003 is a discrete hybrid design, which uses thick film solder manufacturing processes for accurate performance and high reliability. This 2 stage GaAS FET transistor design uses feedback loops for flat broadband linear performance, with low noise figure. The model is parti

文件：115.69 Kbytes 頁(yè)數(shù)：2 Pages

MA-COM