N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICA

文件：201.28 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導體

Power MOSFET

文件：1.28949 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICA

文件：201.28 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.07 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET

文件：2.1207 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體