This device is especially designed for full color video walls.

Features: —Chip technology: InGaAlP / InGaN on Sapphire —Typ. Radiation: 120° —Color: λdom = 622 nm (● red); λdom = 528 nm (● true green); λdom = 472 nm (● blue) —ESD: 500V acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 1B)

文件：1.31129 Mbytes 頁(yè)數(shù)：31 Pages

OSRAM

艾邁斯歐司朗

This device is especially designed for full color video walls.

Features - Package: SMD epoxy package, higher contrast by a black surface (RGB-Displays) - Chip technology: Thinfilm / InGaN on Sapphire - Typ. Radiation: 110° (horizontal), 110° (vertical) - Color: λdom = 621 nm (● red); λdom = 525 nm (● true green); λdom = 472 nm (● blue) - ESD: 500 V acc.

文件：2.12616 Mbytes 頁(yè)數(shù)：28 Pages

OSRAM

艾邁斯歐司朗

OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V JFET-Input, Operational Amplifiers

1 Features ? Low input voltage noise density: 4 nV/√Hz at 1 kHz ? Input voltage noise: 0.1 Hz to 10 Hz: 60 nVRMS ? Low input bias current: 1 pA ? Input offset voltage: 50 μV ? Input offset drift: 0.45 μV/°C ? MUX-friendly inputs ? Gain bandwidth: 45 MHz ? Slew rate: 150 V/μs ? 14-bit se

文件：2.34601 Mbytes 頁(yè)數(shù)：43 Pages

TI

德州儀器

OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V, JFET-Input Operational Amplifiers

1 Features ? Low input voltage noise density: 4 nV/√Hz at 1 kHz ? Input voltage noise: 0.1 Hz to 10 Hz: 60 nVRMS ? Low input bias current: – 0.1 pA (DGN) – 1 pA (D) ? Input offset voltage: – 25 μV (DGN) – 50 μV (D) ? Input offset drift: – 0.2 μV/°C (DGN) – 0.45 μV/°C (D) ? MUX-friend

文件：3.10746 Mbytes 頁(yè)數(shù)：47 Pages

TI

德州儀器

SINGLE CABLE DUCT

文件：58.33 Kbytes 頁(yè)數(shù)：1 Pages

RICHCO