| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
P20N | LOW-POWER, LOW-NOISE, REGULATED HIGH-VOLTAGE SUPPLY 文件：509.81 Kbytes 頁(yè)數(shù)：5 Pages | XPPOWER | XPPOWER | |
N-CHANNEL 500V - 0.23ohm - 20A TO-220/TO-247 Zener-Protected SuperMESH??ower MOSFET DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri 文件：133.58 Kbytes 頁(yè)數(shù)：7 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple 文件：440.68 Kbytes 頁(yè)數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE) Description The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ High dv/dt and avalanche capabilities ■ 100 Avalanch 文件：341.43 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET Features 1. High dv/dt and avalanche capabilities 2. 100% avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the mul 文件：440.68 Kbytes 頁(yè)數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-Channel 100-V (D-S) MOSFET 文件：937.06 Kbytes 頁(yè)數(shù)：7 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation 文件：364.5 Kbytes 頁(yè)數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31336 Mbytes 頁(yè)數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N-channel 500V - 0.20廓 - 20A - TO220/FP-D2PAK-I2PAK MDmesh??Power MOSFET 文件：317.23 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-Channel 650-V (D-S) Super Junction MOSFET 文件：1.15454 Mbytes 頁(yè)數(shù)：11 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI |
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
P20N
- 制造商：
XP Power
- 類(lèi)別：
電源 - 板安裝 > 直流轉(zhuǎn)換器
- 系列：
XP EMCO - P (0.25W)
- 包裝：
散裝
- 類(lèi)型：
高電壓 - 非隔離模塊
- 電壓 - 輸入（最小值）：
5V
- 電壓 - 輸入（最大值）：
12V
- 電壓 - 輸出 1：
-2000V
- 電流 - 輸出（最大值）：
1μA
- 應(yīng)用：
ITE（商業(yè)）
- 工作溫度：
-10°C ~ 70°C
- 安裝類(lèi)型：
通孔
- 封裝/外殼：
7-DIP 模塊
- 大小 / 尺寸：
1.38" 長(zhǎng) x 0.68" 寬 x 0.24" 高（35.1mm x 17.3mm x 6.2mm）
- 描述：
DC DC CONVERTER -2000V
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
XP Power |
25+ |
全新-電源模塊 |
21147 |
DC-DC轉(zhuǎn)換器電源模塊P20N交期短價(jià)格優(yōu)#即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂 |
詢(xún)價(jià) | ||
XP Power |
25+ |
N/A |
12000 |
一級(jí)代理保證進(jìn)口原裝正品假一罰十價(jià)格合理 |
詢(xún)價(jià) | ||
XP |
25+ |
電源模塊 |
64 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
24+ |
8866 |
詢(xún)價(jià) | |||||
ST/進(jìn)口原 |
17+ |
TO-220 |
6200 |
詢(xún)價(jià) | |||
ST |
24+ |
TO220 |
5989 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢(xún)價(jià) | ||
ST |
23+ |
TO-220F |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢(xún)價(jià) | ||
ST |
25+23+ |
TO-220 |
40402 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢(xún)價(jià) | ||
ST |
2022+ |
485 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
ST |
24+ |
TO-220 |
36200 |
全新原裝現(xiàn)貨/放心購(gòu)買(mǎi) |
詢(xún)價(jià) |
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相關(guān)庫(kù)存
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