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                >P20B>規(guī)格書(shū)列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          P20B
          20W DC-DC Converter P-20B-Series
          文件：114.67 Kbytes 頁(yè)數(shù)：2 Pages
          ETCList of Unclassifed Manufacturers
          未分類(lèi)制造商
          

          P20B
          SIDACtor Protection Thyristors
          文件：294.98 Kbytes 頁(yè)數(shù)：4 Pages
          HUAXINAN
          華興安
          

          P2000SB
          絲印：P20B；Package：SMB；Thyristor Surge Suppressors
          
events within limit
● Fails short circuit when surged in excess of ratings
● Low Capacitanc
Features
● Low switching voltage
● Low on-state voltage
● Does not degrade surge capability after multiple surge
e
Typical Applications
● Protect circuit
          文件：1.55873 Mbytes 頁(yè)數(shù)：6 Pages
          LUGUANG
          魯光電子
          

          P2000SB
          絲?。?strong>P20B；Package：DO-214AA；Thyristor Surge Suppressors (TSS)
          
Features and Benefits
Low voltage overshoot
Low on-state voltage
Does not degrade surge capability after multiple surge events
within limit
Fails short circuit when surged in excess of ratings
Low Capacitance
          文件：3.39657 Mbytes 頁(yè)數(shù)：6 Pages
          UNSEMI
          優(yōu)恩半導(dǎo)體
          

          P2000TB
          絲印：P20B；Package：DO-214AC；Thyristor Surge Suppressors (TSS)
          
Features and Benefits
Excellent capability of absorbing transient surge
Quick response to surge voltage (ns Level)
Eliminates over voltage caused by fast rising transients
Moisture sensitivity level: Level 1
Weight 69 mg (approximate)
Non degenerative
Response Time is 
          文件：3.40996 Mbytes 頁(yè)數(shù)：6 Pages
          UNSEMI
          優(yōu)恩半導(dǎo)體
          

          P20B12SL
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current –ID=20A@ TC=25℃
·Drain Source Voltage-
: VDSS= 120V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 44mΩ(Max)@VGS= 10V
·100 avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC con
          文件：352.83 Kbytes 頁(yè)數(shù)：2 Pages
          ISC
          無(wú)錫固電
          

          P20B12SN
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current –ID=20A@ TC=25℃
·Drain Source Voltage-
: VDSS= 120V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 42mΩ(Max)@VGS= 10V
·100 avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC con
          文件：352.83 Kbytes 頁(yè)數(shù)：2 Pages
          ISC
          無(wú)錫固電
          

          P20B1205D
          20W DC-DC Converter P-20B-Series
          文件：114.67 Kbytes 頁(yè)數(shù)：2 Pages
          ETCList of Unclassifed Manufacturers
          未分類(lèi)制造商
          

          P20B1205S
          20W DC-DC Converter P-20B-Series
          文件：114.67 Kbytes 頁(yè)數(shù)：2 Pages
          ETCList of Unclassifed Manufacturers
          未分類(lèi)制造商
          

          P20B1209D
          20W DC-DC Converter P-20B-Series
          文件：114.67 Kbytes 頁(yè)數(shù)：2 Pages
          ETCList of Unclassifed Manufacturers
          未分類(lèi)制造商
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • VDSS (V)：
            120
          • VGSS (V)：
            ±20
          • ID (A)：
            20
          • RDS(on) (typ) (Ω)：
            33m
          • PT (W)：
            44
          • Tch (℃)：
            150
          
            
          
        
          
            
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          MISUBISHI
          		

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          更多P20B供應(yīng)商
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