絲印：P20；Package：SOT563；PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Complementary NPN Types Available (DDC) - Built-In Biasing Resistors - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability

文件：282.89 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導體

絲?。?strong>P20；Package：SOT523；PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Complementary NPN Types Available (DDTC) - Built-In Biasing Resistors, R1 ??R2 - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability

文件：457.15 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導體

絲印：P2040US；Package：SO-8；P-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)

文件：511.36 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導體

絲?。?a target="_blank" title="Marking" href="/p2000ea/marking.html">P2000EA；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82579 Mbytes 頁數(shù)：6 Pages

UNSEMI

優(yōu)恩半導體

絲印：P2000EB；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82166 Mbytes 頁數(shù)：6 Pages

UNSEMI

優(yōu)恩半導體

絲?。?a target="_blank" title="Marking" href="/p2000ec/marking.html">P2000EC；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82987 Mbytes 頁數(shù)：6 Pages

UNSEMI

優(yōu)恩半導體

絲?。?a target="_blank" title="Marking" href="/p20a/marking.html">P20A；Package：SMB；Thyristor Surge Suppressors

events within limit ● Fails short circuit when surged in excess of ratings ● Low Capacitanc Features ● Low switching voltage ● Low on-state voltage ● Does not degrade surge capability after multiple surge e Typical Applications ● Protect circuit

文件：1.55873 Mbytes 頁數(shù)：6 Pages

LUGUANG

魯光電子

絲?。?a target="_blank" title="Marking" href="/p20a/marking.html">P20A；Package：DO-214AA；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.38481 Mbytes 頁數(shù)：6 Pages

UNSEMI

優(yōu)恩半導體

絲?。?a target="_blank" title="Marking" href="/p20b/marking.html">P20B；Package：DO-214AA；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.39657 Mbytes 頁數(shù)：6 Pages

UNSEMI

優(yōu)恩半導體

絲印：P20B；Package：SMB；Thyristor Surge Suppressors

events within limit ● Fails short circuit when surged in excess of ratings ● Low Capacitanc Features ● Low switching voltage ● Low on-state voltage ● Does not degrade surge capability after multiple surge e Typical Applications ● Protect circuit

文件：1.55873 Mbytes 頁數(shù)：6 Pages

LUGUANG

魯光電子