絲印：P1F；Package：SOT-89；NPN SILICON TRANSISTOR SURFACE MOUNT

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. ? PNP Complement is PZT2907AT1 ? The SOT-223 package can be soldered using wave or reflow. ?

文件：136.36 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?strong>P1F；Package：SOT-89；NPN Silicon Planar Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT?223 package which is designed for medium power surface mount applications. Features ? PNP Complement is PZT2907AT1 ? The SOT?223 Package Can be Soldered Using Wave or

文件：113.77 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：353.65 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFETs 900V, 1A, N-channel

文件：1.77914 Mbytes 頁數(shù)：7 Pages

SHINDENGEN