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          首頁 >P10>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          SVFP10N60CAFJ

          絲?。?a target="_blank" title="Marking" href="/p10n60cafj/marking.html">P10N60CAFJ;Package:TO-220FJ-3L;10A, 600V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

          文件:291.71 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

          SVFP10N60CAFJH

          絲?。?a target="_blank" title="Marking" href="/p10n60ca/marking.html">P10N60CA;Package:TO-220FJH-3L;10A, 600V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

          文件:291.74 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

          SVFP10N60CAFJH

          絲?。?a target="_blank" title="Marking" href="/p10n60ca/marking.html">P10N60CA;Package:TO-220FJH-3L;10A, 600V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

          文件:291.72 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

          SVFP10N60CAFJH

          絲?。?a target="_blank" title="Marking" href="/p10n60ca/marking.html">P10N60CA;Package:TO-220FJH-3L;10A, 600V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

          文件:291.71 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

          NCP10670BD060R2G

          絲?。?a target="_blank" title="Marking" href="/p10670060/marking.html">P10670060;Package:SOIC-8;High-Voltage Switcher for Low Power Offline SMPS

          文件:423.94 Kbytes 頁數(shù):25 Pages

          ONSEMI

          安森美半導體

          NCP10670BD100R2G

          絲?。?a target="_blank" title="Marking" href="/p10670100/marking.html">P10670100;Package:SOIC-8;High-Voltage Switcher for Low Power Offline SMPS

          文件:423.94 Kbytes 頁數(shù):25 Pages

          ONSEMI

          安森美半導體

          NCP10671BD060R2G

          絲印:P10671060;Package:SOIC-8;High-Voltage Switcher for Low Power Offline SMPS

          文件:423.94 Kbytes 頁數(shù):25 Pages

          ONSEMI

          安森美半導體

          NCP10671BD100R2G

          絲印:P10671100;Package:SOIC-8;High-Voltage Switcher for Low Power Offline SMPS

          文件:423.94 Kbytes 頁數(shù):25 Pages

          ONSEMI

          安森美半導體

          NCP10672BD060R2G

          絲?。?a target="_blank" title="Marking" href="/p10672060/marking.html">P10672060;Package:SOIC-8;High-Voltage Switcher for Low Power Offline SMPS

          文件:423.94 Kbytes 頁數(shù):25 Pages

          ONSEMI

          安森美半導體

          NCP10672BD100R2G

          絲印:P10672100;Package:SOIC-8;High-Voltage Switcher for Low Power Offline SMPS

          文件:423.94 Kbytes 頁數(shù):25 Pages

          ONSEMI

          安森美半導體

          技術(shù)參數(shù)

          • Package:

            D8x7.5

          • VRRM:

            50 V

          • IFAV:

            10.00 A

          • Tjmax:

            175 °C

          • VF:

            1.05 V

          • IF:

            10.00 A

          • IFSM:

            400.00 A

          • IR:

            10.000 μA

          • Cj:

            pF

          • VR:

            V

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          更多P10供應(yīng)商 更新時間2026-1-21 13:55:00
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