Silicon Photo Transistor

Structure 1.1 Chip Size : 0.60mm X 0.45mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um

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KODENSHI

可天士

Silicon Photo Transistor

Kodenshi-AUK

N-Channel Enhancement Mode MOSFET

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UNIKCWuxi U-NIKC Semiconductor CO.,LTD

旭康微無錫旭康微電子有限公司

SMD Power Inductors Shielded

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PREMO

普萊默

SMD POWER INDUCTORS

GENERAL SPECIFICATION : e) Resistance to solder heat : 260°C.10 secs d) Operating temp. : -40°C to +85°C c) Storage temp. : -40°C to +125°C b) Rated current : Base on temp. rise & ?L/L0A = 10 Max. a) Temp. rise : 40°C Max.

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