NPN Pho totransistor with Collector- Emitter Capacitor

Description The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity. Features ? Supresses h

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OPTEK

NPN Silicon Phototransistor

Descripton: OP550, OP552, OP555, OP750, and OP770 series consists of a NPN silicon phototransistor molded in an epoxy package with a wide receiving angle that provides relatvely even recepton over a large area. The OP750 and OP770 have additonal circuitry to enhance the operaton of the device for

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TTELEC

Package：徑向；包裝：散裝 類別：傳感器，變送器 光學(xué)傳感器 - 光電晶體管 描述：SENSOR PHOTO 935NM SIDE VIEW RAD

OPTEK

Reflective Object Sensor

Description: Each sensor in the OPB750 and OPB755 series has a reflective assembly that features a Light Emitting Diode (LED) and phototransistor output designed to decrease low-level light, while not affecting the high-level light gain. Features: ? High contrast ratio (1,000 :1 minimum) ? Low

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OPTEK

Photologic Reflective Object Sensors

Description The OPB760N series of reflective assemblies feature Photologic? output. This electrical output can be specified as either TTL Totem Pole or TTL Open Collector. Either may be supplied with inverter or buffer output polarity. All have the added stability of a built-in hysteresis ampli

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OPTEK

Photologic Reflective Object Sensor

Description: The OPB760N, OPB760T, OPB770N and OPB770T series of reflec?ve assemblies feature Photologic? output. The electrical output can be specified as either TTL Totem-Pole or TTL Open-Collector, either of which can be supplied with inverter or buffer output polarity. OPB760N and OPB760T se

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TTELEC