NEXT GENERATION OP07, ULTRALOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The OP-77 significantly advances the state-of-the-art in precision op amps. The OP-77s outstanding gain of 10,000,000 or more is maintained over the full ±10V output range.

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Next Generation OP07 Ultralow Offset Voltage Operational Amplifier

GENERAL DESCRIPTION The OP-77 significantly advances the state-of-the-art in precision op amps. The OP-77s outstanding gain of 10,000,000 or more is maintained over the full ±10V output range.

文件：245.87 Kbytes 頁(yè)數(shù)：16 Pages

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Next Generation OP07 Ultralow Offset Voltage Operational Amplifier

FEATURES Outstanding gain linearity Ultrahigh gain, 5000 V/mV min Low VOS over temperature, 55 μV max TCVOS, 0.3 μV/°C max High PSRR, 3 μV/V max Low power consumption, 60 mW max Available in die form

文件：380.78 Kbytes 頁(yè)數(shù)：16 Pages

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Next Generation OP07 Ultralow Offset Voltage Operational Amplifier

文件：245.87 Kbytes 頁(yè)數(shù)：16 Pages

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Next Generation OP07 Ultralow Offset Voltage Operational Amplifier

文件：317.81 Kbytes 頁(yè)數(shù)：16 Pages

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Next Generation OP07 Ultralow Offset Voltage Operational Amplifier

FEATURES Outstanding gain linearity Ultrahigh gain, 5000 V/mV min Low VOS over temperature, 55 μV max TCVOS, 0.3 μV/°C max High PSRR, 3 μV/V max Low power consumption, 60 mW max Available in die form

文件：380.78 Kbytes 頁(yè)數(shù)：16 Pages

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NPN Pho totransistor with Collector- Emitter Capacitor

Description The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity. Features ? Supresses h

文件：102.45 Kbytes 頁(yè)數(shù)：2 Pages

OPTEK

NPN Silicon Phototransistor

Descripton: OP550, OP552, OP555, OP750, and OP770 series consists of a NPN silicon phototransistor molded in an epoxy package with a wide receiving angle that provides relatvely even recepton over a large area. The OP750 and OP770 have additonal circuitry to enhance the operaton of the device for

文件：1.25623 Mbytes 頁(yè)數(shù)：6 Pages

TTELEC

NPN Silicon Phototransistor

Descripton: OP550, OP552, OP555, OP750, and OP770 series consists of a NPN silicon phototransistor molded in an epoxy package with a wide receiving angle that provides relatvely even recepton over a large area. The OP750 and OP770 have additonal circuitry to enhance the operaton of the device for

文件：1.25623 Mbytes 頁(yè)數(shù)：6 Pages

TTELEC

NPN Pho totransistor with Collector- Emitter Capacitor

Description The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity. Features ? Supresses h

文件：102.45 Kbytes 頁(yè)數(shù)：2 Pages

OPTEK