Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

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Micropower Operational Amplifiers

FEATURES Rail-to-Rail Input and Output Swing Low Power: 60
A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300
V max High Open-Loop Gain: 500 V/mV Unity-Gain Stable No Phase Reversal APPLICATIONS Battery Monitoring Sensor Conditione

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Micropower, Rail-to-Rail Input and Output Operational Amplifiers

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MicroConverter? 12-Bit ADCs and DACs with Embedded High Speed 62-kB Flash MCU

文件：908.68 Kbytes 頁數(shù)：88 Pages

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微功耗RRIO雙通道運算放大器

OP196系列CBCMOS運算放大器具有微功耗特性和軌到軌輸入/輸出范圍。\n\n 這些放大器的電源要求極低，保證工作電壓范圍為+3 V至+12 V，因而非常適合監(jiān)控電池使用情況和控制電池充電。良好的動態(tài)性能，包括26 nV/√z電壓噪聲密度，則適合電池供電音頻應(yīng)用。這些器件可以處理最高200 pF的容性負(fù)載而不會發(fā)生振蕩。\n\n OP196/OP296/OP496的額定溫度范圍為-40°C至+125°C HOT擴展工業(yè)溫度范圍。以+3 V電壓工作時，額定溫度范圍為0°C至+125°C。單通道OP196和雙通道OP296提供8引腳塑封DIP和SO-8表貼兩種封裝。四通道O ? 軌到軌輸入和輸出擺幅\n\n? 低功耗：每個放大器60 μA\n\n? 增益帶寬積：450 kHz\n\n? 單電源供電：3 V至12 V\n\n? 低失調(diào)電壓：300 μV（最大值）\n\n? 高開環(huán)增益：500 V/mV\n\n? 單位增益穩(wěn)定\n\n? 無反相;

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GaAs plastic infrared emitting diode

TT Electronics

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

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OPTEK

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 頁數(shù)：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 頁數(shù)：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 頁數(shù)：9 Pages

TTELEC