DUAL/QUAD RAIL-TO-RAIL OPERATIONAL AMPLIFIERS

GENERAL DESCRIPTION The AD8546 and AD8548 are dual and quad micropower, high input impedance amplifiers optimized for low power and wide operating supply voltage range applications. The AD8546/AD8548 rail-to-rail input/output (RRIO) feature provides increased dynamic range to drive low frequ

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AD

亞德諾

Dual/Quad Rail-to-Rail Operational Amplifiers

FEATURES Rail-to-rail output swing Single-supply operation: 3 V to 36 V Low offset voltage: 300 μV Gain bandwidth product: 75 kHz High open-loop gain: 1000 V/mV Unity-gain stable Low supply current/per amplifier: 150 μA maximum APPLICATIONS Battery-operated instrumentation Servo amplifie

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AD

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22 關(guān)A, RRIO, CMOS, 18 V

文件：696.47 Kbytes 頁數(shù)：24 Pages

AD

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Dual/Quad Rail-to-Rail Operational Amplifiers

文件：399.31 Kbytes 頁數(shù)：16 Pages

AD

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軌到軌雙通道運(yùn)算放大器

OP495和OP295分別為四通道和雙通道CBCMOS運(yùn)算放大器，具有軌到軌輸出擺幅和直流精度等重要特性。利用雙極性前端，這些器件可實(shí)現(xiàn)比CMOS設(shè)計(jì)更低的噪聲和更高的精度。輸入級(jí)和輸出級(jí)均包括負(fù)電源電壓，因此能夠?qū)崿F(xiàn)零輸入零輸出工作方式。OP295/OP495采用3 V電源供電，適合鋰電池等3.3 V系統(tǒng)使用。\n\n 采用5 V電源時(shí)，最大額定失調(diào)電壓為300 μV，最小開環(huán)增益為1000 V/mV。由此獲得的性能可以用于實(shí)現(xiàn)高精度系統(tǒng)，甚至在單電源設(shè)計(jì)中也能實(shí)現(xiàn)。\n\n 軌到軌輸出擺幅和15 mA負(fù)載驅(qū)動(dòng)電流能力，使得OP295/OP495成為功率晶體管和H電橋的理 ? 軌到軌輸出擺幅 \n\n? 單電源供電：3 V至36 V \n\n? 低失調(diào)電壓：300 μV \n\n? 增益帶寬積：75 kHz \n\n? 高開環(huán)增益：1000 V/mV \n\n? 單位增益穩(wěn)定 \n\n? 低電源電流/每個(gè)放大器：150 μA （最大值）;

ADI

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GaAs plastic infrared emitting diode

TT Electronics

Dual/Quad Rail-to-Rail Operational Amplifiers

FEATURES Rail-to-rail output swing Single-supply operation: 3 V to 36 V Low offset voltage: 300 μV Gain bandwidth product: 75 kHz High open-loop gain: 1000 V/mV Unity-gain stable Low supply current/per amplifier: 150 μA maximum APPLICATIONS Battery-operated instrumentation Servo amplifie

文件：375.79 Kbytes 頁數(shù)：16 Pages

AD

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Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

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OPTEK

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

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TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 頁數(shù)：9 Pages

TTELEC