INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE

500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal PackageDESCRIPTION\nThe IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and reson ? Isolated Hermetic Metal Package\n? High Input Impedance\n? Low On-Voltage\n? High Current Capability\n? Fast Turn-Off\n? Low Conductive Losses\n? Available Screened to MIL-S-19500, TX, TXV And S Levels;

Infineon

英飛凌

INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE

文件：22.25 Kbytes 頁數(shù)：2 Pages

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