LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate charge simpler dr

文件：215.37 Kbytes 頁數(shù)：6 Pages

IRF

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate charge simpler dr

文件：215.37 Kbytes 頁數(shù)：6 Pages

IRF

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.022? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATION

文件：201 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導體

N-Channel 60-V (D-S) MOSFET

文件：979.18 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導體