MOSFET - Power, Single N-Channel 80 V, 20 m, 30 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

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絲?。?a target="_blank" title="Marking" href="/020n08hl/marking.html">020N08HL；Package：LFPAK8；MOSFET - Power, Single N-Channel 80 V, 20 m, 30 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：267.82 Kbytes 頁(yè)數(shù)：7 Pages

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MOSFET – Power, Single, N-Channel,

MOSFET – Power, Single, N-Channel, 80 V, 20 mΩ, 30 A ? Small Footprint (3.3 x 3.3mm)\n? Compact Design\n? Low RDS(on)\n? Minimize Conduction Losses\n? Low Capacitance\n? Minimize Driver Losses\n? AEC?Q101 Qualified and PPAP Capable\n? These Devices are Pb?Free and are RoHS Compliant;

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MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

文件：280.53 Kbytes 頁(yè)數(shù)：7 Pages

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MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

文件：280.53 Kbytes 頁(yè)數(shù)：7 Pages

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MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：281.03 Kbytes 頁(yè)數(shù)：7 Pages

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