30 V, 154 mA, Single, N??hannel, Gate ESD Protection, SC-75

MOSFET – Single, N-Channel, Small Signal, Gate ESD Protection, SC-75 30 V, 154 mA Features ? Low Gate Charge for Fast Switching ? Small 1.6 x 1.6 mm Footprint ? ESD Protected Gate ? NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

文件：105.18 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

30 V, 154 mA, Single, N??hannel, Gate ESD Protection, SC-75

MOSFET – Single, N-Channel, Small Signal, Gate ESD Protection, SC-75 30 V, 154 mA Features ? Low Gate Charge for Fast Switching ? Small 1.6 x 1.6 mm Footprint ? ESD Protected Gate ? NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

文件：105.18 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

單 N 溝道，小信號 MOSFET，帶 ESD 保護，30V，154mA，7Ω

Automotive Power MOSFET ideal for low power applications. 30V, 154mA, 7 Ohm, Single N-Channel, SC-75 with ESD Protection, Logic Level.AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. ? Low Gate Charge for Fast Switching\n? Small 1.6 x 1.6 mm Footprint\n? ESD Protected Gate\n? AEC-Q101 Qualified and PPAP capable\n? RoHS Compliant;

ONSEMI

安森美半導(dǎo)體

60 V, single N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Very fast switching ? Trench MOSFET technology ? ESD protected 3. Applications

文件：724.97 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世

60 V, dual N-channel Trench MOSFET

文件：1.46307 Mbytes 頁數(shù)：15 Pages

NEXPERIA

安世