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    首頁 >NVMFD5C478N>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    NVMFD5C478N

    Power MOSFET 40 V, 17.0 m, 27 A, Dual N??hannel

    Features ? Small Footprint (5 x 6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? NVMFD5C478NWF ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

    文件:220.92 Kbytes 頁數(shù):7 Pages

    ONSEMI

    安森美半導(dǎo)體

    NVMFD5C478NL

    Power MOSFET 40 V, 14.5 m, 29 A, Dual N??hannel

    Features ? Small Footprint (5 x 6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? NVMFD5C478NLWF ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

    文件:179.95 Kbytes 頁數(shù):7 Pages

    ONSEMI

    安森美半導(dǎo)體

    NVMFD5C478NLT1G

    絲?。?a target="_blank" title="Marking" href="/5c478l/marking.html">5C478L;Package:DFN8;Power MOSFET 40 V, 14.5 m, 29 A, Dual N??hannel

    Features ? Small Footprint (5 x 6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? NVMFD5C478NLWF ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

    文件:179.95 Kbytes 頁數(shù):7 Pages

    ONSEMI

    安森美半導(dǎo)體

    NVMFD5C478NLWFT1G

    絲印:478LWF;Package:DFN8;Power MOSFET 40 V, 14.5 m, 29 A, Dual N??hannel

    Features ? Small Footprint (5 x 6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? NVMFD5C478NLWF ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

    文件:179.95 Kbytes 頁數(shù):7 Pages

    ONSEMI

    安森美半導(dǎo)體

    NVMFD5C478NT1G

    絲印:5C478N;Package:DFN8;Power MOSFET 40 V, 17.0 m, 27 A, Dual N??hannel

    Features ? Small Footprint (5 x 6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? NVMFD5C478NWF ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

    文件:220.92 Kbytes 頁數(shù):7 Pages

    ONSEMI

    安森美半導(dǎo)體

    NVMFD5C478NWFT1G

    絲?。?a target="_blank" title="Marking" href="/478nwf/marking.html">478NWF;Package:DFN8;Power MOSFET 40 V, 17.0 m, 27 A, Dual N??hannel

    Features ? Small Footprint (5 x 6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? NVMFD5C478NWF ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

    文件:220.92 Kbytes 頁數(shù):7 Pages

    ONSEMI

    安森美半導(dǎo)體

    NVMFD5C478N

    雙 N 溝道功率 MOSFET 40 V,27 A,17.0 mΩ

    Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. ? Low on resistance\n? Minimal conduction losses\n? High current capability\n? Robust load performance\n? AEC?Q101 Qualified and PPAP Capable\n? Suitable for automotive applications\n? NVMFD5C478NWF ? Wettable Flanks Product\n? Enhanced Optical Inspection\n? RoHS Compliant;

    ONSEMI

    安森美半導(dǎo)體

    NVMFD5C478NL

    雙 N 溝道功率 MOSFET 40V,29A,14.5mΩ

    Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. ? Low on resistance\n? High current capability\n? 100% avalanche tested\n? AEC?Q101 Qualified and PPAP Capable\n? NVMFD5C478NLWF ? Wettable Flanks Product\n? RoHS Compliant\n;

    ONSEMI

    安森美半導(dǎo)體

    技術(shù)參數(shù)

    • Pb-free:

      Pb

    • AEC Qualified:

      A

    • Halide free:

      H

    • PPAP Capablee:

      P

    • Status:

      Active

    • Channel Polarity:

      N-Channel

    • Configuration:

      Dual

    • V(BR)DSS Min (V):

      40

    • VGS Max (V):

      20

    • VGS(th) Max (V):

      4

    • ID Max (A):

      24

    • PD Max (W):

      18

    • RDS(on) Max @ VGS = 10 V(mΩ):

      14.7

    • Qg Typ @ VGS = 10 V (nC):

      7

    • Ciss Typ (pF):

      350

    • Package Type:

      SO-8FL Dual/DFN-8

    供應(yīng)商型號品牌批號封裝庫存備注價格
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    ON/安森美
    23+
    DFN85x6
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    ONN
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    ON/安森美
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    275000
    一級代理原裝正品,價格優(yōu)勢,長期供應(yīng)!
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    全新原裝 支持表配單 中國著名電子元器件獨立分銷
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    更多NVMFD5C478N供應(yīng)商 更新時間2026-1-23 9:18:00

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