650 V GaNFast? Power IC

This 650 V GaNFast power IC is optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient power c GaNFast? Power IC\r\n? Monolithically-integrated gate drive\r\n? Wide logic input range with hysteresis\r\n? 5 V / 15 V input-compatible\r\n? Wide VCC range (10 to 30 V)\r\n? Programmable turn-on dV/dt\r\n? 200 V/ns dV/dt immunity\r\n? 650 V eMode GaN FET\r\n? Low 300 m? resistance\r\n? Zero reverse;

Navitas

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650 V GaNFast??Power IC

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Package：8-PowerVDFN；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 配電開關，負載驅動器 描述：IC PWR GANFAST N-CH 1:1 8QFN

Navitas Semiconductor, Inc.

Package：8-PowerVDFN；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 配電開關，負載驅動器 描述：IC PWR GANFAST N-CH 1:1 8QFN

Navitas Semiconductor, Inc.