MOSFET – Power, Single, N-Channel

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? These Devices are Pb?Free and are RoHS Compliant

文件：348.09 Kbytes 頁(yè)數(shù)：7 Pages

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Power MOSFET, 60 V, 2.0Ω, 185 A, Single N-Channel

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. ? Ultra Low RDS-on\n? LFPAK-E Package;

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安森美半導(dǎo)體

MOSFET ??Power, Single N-Channel 60 V, 2.0 m, 185 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：346.02 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET ??Power, Single N-Channel 60 V, 2.0 m, 185 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：346.02 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體