N-Channel Dual CoolTM 56 PowerTrench? MOSFET 100V, ___A, 4.2mΩ

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench? process. Advancements in both silicon and Dual Cool? package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal re ? Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 44 A\n? ReducesConduction loss\n?Dual Cool? Top Side Cooling PQFN package\n? Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A\n?High performance technology for extremely low rDS(on)\n?100% UIL Tested\n?RoHS Compliant;

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/4d2n/marking.html">4D2N；Package：DFN8；MOSFET - Power, Single N-Channel, DUAL COOL, DFN8 5x6.15 100 V, 4.3 m, 116 A

文件：293.36 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

MOSFET - Power, Single N-Channel, DFNW8 100 V, 4.2 m, 178 A

文件：369.01 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

MOSFET ??Power, Single, N-Channel

文件：151.59 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體